Dominant Role of Sulphur divacancy in Charge Trapping Dynamics in MoS${}_2$

Intrinsic defects govern carrier trapping and recombination in two-dimensional semiconductors, yet the microscopic origin of defect-dependent capture dynamics remains unclear. Here, we compute carrier capture coefficients of vacancy defects, treating monolayer MoS${}_2$ as a prototype, from first principles. We find that the single Sulphur vacancy forms a shallow defect with a small capture coefficient of $\sim {10}^{-16}{\mathrm{c}\mathrm{m}}^3\mathrm{/}\mathrm{s}$, whereas the Sulphur divacancy exhibits a capture coefficient larger by seven orders of magnitude, $\sim {10}^{-9}{\mathrm{c}\mathrm{m}}^3\mathrm{/}\mathrm{s}$, despite being only moderately deeper in energy. This enhancement originates from strong lattice relaxation enabling efficient multiphonon capture. Consequently, single vacancies contribute weakly to trapping, while Sulphur divacancies dominate nonradiative recombination and reduce quantum yield. In contrast, molybdenum vacancies and Sulphur antisites, although deep, show much smaller capture coefficients, indicating a limited role in carrier trapping in n-type devices.