Many-Body Rashba Spin-Orbit Interaction and Exciton Spin Relaxation in Atomically Thin Semiconductor Structures

We propose a pair spin-orbit interaction (PSOI) mechanism by establishing a mesoscopic many-particle Rashba Hamiltonian. In lowest order, this Hamiltonian self-consistently describes exciton spin relaxation in monolayer transition metal dichalcogenides (TMDC) due to local electric fields caused by spatial asymmetries in the dielectric environment. For a monolayer MoSe${}_2$ on a SiO${}_2$ substrate above 77$$K showing a bright-dark splitting in the meV range, the local electric field causes fast intravalley spin relaxation on a sub-picosecond timescale, whereas it is negligible for other TMDCs with larger bright-dark splitting.