Stabilizing Itinerant Electrons in a Corner-Sharing Kagomé Oxide Nd4Os3ZnO14

Kagome oxides provide a fertile platform for exploring exotic electronic states arising from geometrical frustration and characteristic band topology. Here, we report the synthesis of a 5d transition-metal kagome oxide, Nd4Os3ZnO14, obtained via high-temperature, high-pressure hydrothermal synthesis. Single-crystal X-ray diffraction reveals a two-dimensional kagome network formed by corner-sharing OsO6 octahedra, with a nominal osmium valence of +4.67. In-plane resistivity and hard X-ray photoelectron spectroscopy measurements indicate that the semimetallic electronic structure at room temperature evolves into a semiconducting ground state upon cooling, accompanied by a pronounced enhancement of hole mobility. Magnetic susceptibility measurements demonstrate localized Nd3+ moments without long-range magnetic order down to 2 K. The coexistence of a metallic kagome plane, strong spin-orbit coupling inherent to 5d electrons, and rare-earth magnetism establishes Nd4Os3ZnO14 as a promising platform for investigating correlated electron phenomena in kagome oxides within the itinerant regime.