Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi$_{2}$

Using DFT-based first-principles calculations, we demonstrate the tuning of the electronic structure of Weyl semimetal SrSi $_{2}$ via external uniaxial strain. The uniaxial strain facilitates the opening of bandgap along $Γ$ -X direction and subsequent band inversion between Si $p$ and Sr $d$ orbitals. Z $_{2}$ invariants and surface states reveal conclusively that SrSi $_{2}$ under uniaxial strain is a strong topological insulator. Hence, uniaxial strain drives the semimetallic SrSi $_{2}$ into fully gapped topological insulating state depicting a semimetal to topological insulator phase transition. Our results highlight the suitability of uniaxial strain to gain control over the topological phase transitions and topological states in SrSi $_{2}$ .

Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi $_{2}$

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Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi $_{2}$

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Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi22​

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Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi22​

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Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi $_{2}$

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Pressure driven Weyl-topological insulator phase transition in Weyl semimetal SrSi $_{2}$

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