Gate-modulated reflectance spectroscopy for detecting excitonic species in two-dimensional semiconductors

We have developed a microspectroscopy technique for measuring gate-modulated reflectance to probe excitonic states in two-dimensional transition metal dichalcogenides. Successfully observing excited states of excitons from cryogenic to room temperature showed that this method is more sensitive to excitonic signals than traditional reflectance spectroscopy. Our results demonstrated the potential of this reflectance spectroscopy method in studying exciton physics in two-dimensional transition metal dichalcogenides and their heterostructures.