Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudo-magnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn honeycomb (stanene) and FeSn kagome layers, on SrTiO(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudo-magnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.

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