$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

$β$ -Ga $_{2}$ O $_{3}$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$ -Ga $_{2}$ O $_{3}$ vertical power devices.

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

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$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

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ββ-Ga22​O33​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

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ββ-Ga22​O33​ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

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$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

讲解博客

AI智能校验

$β$ -Ga $_{2}$ O $_{3}$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

讲解博客

AI智能校验