The electronic properties of the surface of -FeSi have been debated for a long while. We studied the surface states of -FeSi films grown on Si(001) substrates using scanning tunnelling microscopy (STM) and spectroscopy (STS), with the aid of density functional theory (DFT) calculations. STM simulations using the surface model proposed by Romanyuk et al. [Phys. Rev. B 90, 155305 (2014)] reproduce the detailed features of experimental STM images. The result of STS showed metallic surface states in accordance with theoretical predictions. The Fermi level was pinned by a surface state that appeared in the bulk band gap of the -FeSi film, irrespective of the polarity of the substrate. We also observed negative differential conductance at 0.45 eV above the Fermi level in STS measurements performed at 4.5 K, reflecting the presence of an energy gap in the unoccupied surface states of -FeSi.

生成讲解博客的中文版本

生成AI智能校验的中文版本