Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb$_{2n+1}$Si$_n$Te$_{4n+2}$

Recent experiments have demonstrated interesting physics in a family of two-dimensional (2D) composition-tunable materials Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$ . Here, we show that owing to its intrinsic low symmetry, metallic nature, tunable composition, and ambient stability, these materials offer a good platform for studying Berry curvature dipole (BCD) and nonlinear Hall effect. Using first-principles calculations, we find that BCD exhibits pronounced peaks in monolayer Nb $_{3}$ SiTe $_{6}$ ( $n = 1$ case). Its magnitude decreases monotonically with $n$ and completely vanishes in the $n \to \infty$ limit. This variation manifests a special hidden dimensional crossover of the low-energy electronic states in this system. The resulting nonlinear Hall response from BCD in these materials is discussed. Our work reveals pronounced geometric quantities and nonlinear transport physics in Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$ family materials, which should be readily detected in experiment.

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$

文献摘要

讨论

讲解博客

AI智能校验

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$

文献摘要

讨论

讲解博客

AI智能校验

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb2n+12n+1​Sinn​Te4n+24n+2​

文献摘要

讨论

|讲解博客

|AI智能校验

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb2n+12n+1​Sinn​Te4n+24n+2​

文献摘要

讨论

|讲解博客

|AI智能校验

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$

讲解博客

AI智能校验

Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb $_{2 n + 1}$ Si $_{n}$ Te $_{4 n + 2}$

讲解博客

AI智能校验