Rubidium Focused Ion Beam Induced Platinum Deposition

This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Under similar beam energies, 8.5 keV for Rb${}^{+}$ and 8.0 keV for Ga${}^{+}$, and beam current near 10 pA, the two ion species deposited Pt films at similar rates. Energy-dispersive x-ray spectroscopy shows that the Rb${}^{+}$ FIBID-Pt consists of similar Pt contents with much lower primary ion contents (5% Rb and 27% Ga) than the Ga${}^{+}$ FIBID-Pt. The deposited material was also measured to have a resistivity of $8.1\times {10}^4$ $\mu \mathrm{\Omega }\cdot \mathrm{c}\mathrm{m}$ for the Rb${}^{+}$ FIBID-Pt and $5.7\times {10}^3$ $\mu \mathrm{\Omega }\cdot \mathrm{c}\mathrm{m}$ for the Ga${}^{+}$ FIBID-Pt.