We report measurements of the Meissner screening profile in a Nb(300 nm)/AlO thin film using Li -detected nuclear magnetic resonance (-NMR). The NMR probe Li was ion-implanted into the Nb film at energies 20 keV, corresponding to mean stopping depths comparable to Nb’s magnetic penetration depth . Li’s strong dipole-dipole coupling with the host Nb nuclei provided a “cross-relaxation” channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate . From a fit of the data to a model accounting for its dependence on temperature, magnetic field, and Li implantation energy, we obtained a magnetic penetration depth = 51.5(22) nm, consistent with a relatively short carrier mean-free-path = 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step towards using Li -NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators.

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