加载中…
Evaluation of critical bandstructure and quantum transport parameters in two-dimensional systems is challenging when competition emerges among different energy scales shaping quantum oscillations in a magnetic field. Here we overcome this challenge in low-disorder strained germanium quantum wells by evaluating self-consistently effective mass, g-factor, and quantum lifetime. As a result, we estimate a quantum mobility of 133(3)10 cm/Vs, setting a benchmark for 2D holes in group IV semiconductors. The high quality of the hole gas if further highlighted by observing clean fractional quantum Hall states at low magnetic field and low density.

生成讲解博客的中文版本

生成AI智能校验的中文版本