Theory of resonant Raman scattering due to spin-flips of resident charge carries and excitons in perovskite semiconductors

We have developed a theory of Raman scattering with single and double spin flips of localized resident electrons and holes as well as nonequilibrium localized excitons in semiconductor perovskite crystals under optical excitation in the resonant exciton region. Scattering mechanisms involving localized excitons, biexcitons and exciton polaritons as intermediate states has been examined, the spin-flip Raman scattering by polaritons being a novel mechanism. The derived equations are presented in the invariant form allowing one for the analysis of the dependence of scattering efficiency on the polarization of the initial and scattered light and on the orientation of the external magnetic field.