Low-temperature electron mobility in doped semiconductors with high dielectric constant

We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of $\mathit{\text{vector}}$ character of deformations caused in the crystalline lattice by any point defects siting asymmetrically in the unit cell. In result, local lattice compression due to the elastic deformations decay as $1\mathrm{/}{r}^2$ with distance from impurity. Electron scattering (due to standard deformation potential) on such defects leads to low-temperature mobility $\mu (n)$ scaling with electron density $n$ of the form $\mu (n)\propto n^{-2\mathrm{/}3}$ that is close to experimental observations on a number of relevant materials.