Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF$_6$ plasma and Al(CH$_3$)$_3$

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF $_{6}$ plasma and trimethylaluminum (Al(CH $_{3}$ ) $_{3}$ , TMA). ALE was observed at temperatures greater than 200 $^{\circ}$ C, with a maximum etch rate of 1.9 Å/cycle observed at 300 $^{\circ}$ C as measured using ex-situ ellipsometry. After ALE, the etched surface was found to contain a lower concentration of oxygen compared to the original surface and exhibited a $\sim 35$ % decrease in surface roughness. These findings have relevance for applications of AlN in nonlinear photonics and wide bandgap semiconductor devices.

Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

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Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

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Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF66​ plasma and Al(CH33​)33​

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Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF66​ plasma and Al(CH33​)33​

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Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

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Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF $_{6}$ plasma and Al(CH $_{3}$ ) $_{3}$

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