We investigate the relative thermodynamic stability of the , , , and infinitely large structures related to the dimers-adatoms-stacking faults family of Si surface reconstructions by means of first-principles calculations. Upon accounting for the vibrational contribution to the surface free energy, we find that the structure is more stable than the at low temperatures. While a phase transition is anticipated to occur at around room temperature, the transformation upon cooling is hindered by the limited mobility of Si atoms. The results not only flag a crucial role of vibrational entropy in the formation of the structure at elevated temperatures, but also point for its metastable nature below room temperature.

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