Trigonal PtBi is one of the attractive van-der-Waals materials because of the enhancement of its superconducting transition temperature by doping chalcogen elements such as Se and Te. Recently, it has been reported that of Pt(BiSe) is enhanced by a factor of 4, compared to the pristine PtBi, together with the polar-nonpolar structural phase transition. Thus, it is desirable to study electrical transport properties for this new superconducting compound. Here, we have performed magnetotransport measurements for Pt(BiSe) ( = 0.06 and 0.08) thin-film devices and have observed a peculiar magnetoresistance where a finite hysteresis appears when the superconducting state is broken. By measuring the magnetoresistance systematically, we have attributed this magnetoresistance to the two-level critical-state where fluxons pinned in Pt(BiSe) play an important role.

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