Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In${}_2$Se${}_3$

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3$d$ transition metal ™ is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In${}_2$Se${}_3$, and the magnetocrystalline anisotropy energy (MAE) can be high to -0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3$d$ TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by second variation method.