Ultrafast relaxation dynamics of excited carriers in metals: Simplifying the intertwined dependencies upon scattering strengths, phonon temperature, photon energy, and excitation level

Using the Boltzmann transport equation (BTE), we study the evolution of nonequilibrium carrier distributions in simple ($sp$) metals, assumed to have been instantaneously excited by an ultrafast laser pulse with photon energy $h\nu$. The mathematical structure of the BTE scattering integrals reveals that $h\nu$ is a natural energy scale for describing the dynamics. Normalizing all energy quantities by $h\nu$ leads to a set of three unitless parameters – $\beta \mathrm{/}\delta$, $\gamma$, and $\alpha$ – that control the relaxation dynamics: $\beta \mathrm{/}\delta$ is the normalized ratio of electron-phonon to electron-electron scattering strengths, $\gamma$ is the normalized phonon (lattice) temperature, and $\alpha$ is the normalized absorbed energy density. Using this theory, we systematically investigate relaxation times for the high-energy part of the distribution (${\tau }_H$), energy transfer to the phonon subsystem (${\tau }_E$), and intracarrier thermalization (${\tau }_{th}$). In the linear region of response (valid when $\alpha$ is sufficiently small), we offer heuristic descriptions of each of these relaxation times as functions of $\beta \mathrm{/}\delta$ and $\gamma$. Our results as a function of excitation level $\alpha$ show that many ultrafast experimental investigations lie in a transition region between low excitation (where the relaxation times are independent of $\alpha$) and high excitation (where the two-temperature model of carrier dynamics is valid). Approximate boundaries that separate these three regions are described by simple expressions involving the normalized parameters of our model.