Intensive gamma-ray light sources based on oriented single crystals

The feasibility of gamma-ray light sources based on the channeling phenomenon of ultra-relativistic electrons and positrons in oriented single crystals is demonstrated using rigorous numerical modeling. Case studies are presented for 10 GeV and sub-GeV $e^{-}\mathrm{/}{e}^{+}$ beams incident on ${10}^{-1}-{10}^0$ mm thick diamond and silicon crystals. It is shown that for moderate values of the beam average current ($\lesssim 10$ $\mu$A) the average photon flux in the energy range ${10}^0-{10}^2$ MeV emitted within the ${10}^1-{10}^3$ $\mu$rad cone and 1 % bandwidth can be on the level of ${10}^{10}$ photon/s for electrons and ${10}^{10}-{10}^{12}$ photon/s for positrons. These values are higher than the fluxes available at modern laser-Compton gamma ray light sources.