Reconstruction of the Doping Profile in Vlasov-Poisson

We study the inverse problem of recovering the doping profile in the stationary Vlasov-Poisson equation, given the knowledge of the incoming and outgoing measurements at the boundary of the domain. This problem arises from identifying impurities in the semiconductor manufacturing. Our result states that, under suitable assumptions, the doping profile can be uniquely determined through an asymptotic formula of the electric field that it generates.