Study of electronic and optical properties of Si${}_{1-x}$Ge${}_x$O${}_2$ with i phase structure to find high-k

In this work, the electronic and optical properties of Si${}_{1-x}$Ge${}_x$O${}_2$ at equilibrium and non-equilibrium condition were calculated using a full potential linear augmented plane wave plus local orbital method. The effect of Si and Ge on electronic and optical properties of Si${}_{1-x}$Ge${}_x$O${}_2$ is investigated. It was found that Si${}_{1-x}$Ge${}_x$O${}_2$ compounds could be used as a high-K in electronics devices