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A self-consistent model for the simulation of Ge-rich GeSbTe phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the material. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations.

生成讲解博客的中文版本

生成AI智能校验的中文版本