Layer number and stacking order-dependent thermal transport in molybdenum disulfide with sulfur vacancies

Recent theoretical works on two-dimensional molybdenum disulfide, MoS${}_2$, with sulfur vacancies predict that the suppression of thermal transport in MoS${}_2$ by point defects is more prominent in monolayers and becomes negligible as layer number increases. Here, we investigate experimentally the thermal transport properties of two-dimensional molybdenum disulfide crystals with inherent sulfur vacancies. We study the first-order temperature coefficients of interlayer and intralayer Raman modes of MoS${}_2$ crystals with different layer numbers and stacking orders. The in-plane thermal conductivity ($\kappa$) and total interface conductance per unit area ($g$) across the 2D material-substrate interface of mono-, bi- and tri-layer MoS${}_2$ samples are measured using the micro-Raman thermometry. Our results clearly demonstrate that the thermal conductivity is significantly suppressed by sulfur vacancies in monolayer MoS${}_2$. However, this reduction in $\kappa$ becomes less evident as the layer number increases, confirming the theoretical predictions. No significant variation is observed in the $\kappa$ and $g$ values of 2H and 3R stacked bilayer MoS${}_2$ samples.