We measured the energy efficiency of information erasure using silicon DRAM cells capable of counting charges on capacitors at the single-electron level. Our measurements revealed that the efficiency decreased as the erasure error probability decreased, and notably, the Landauer limit was not achieved even under effectively infinite-time bit erasure. By comparing the measured efficiency with the Landauer limit, we identified a thermodynamic constraint that prevents DRAM from reaching this limit: the inability to prepare the initial state in thermal equilibrium, which in turn prohibits quasistatic operations. This finding has broad implications for DRAM cells and for many electronic circuits sharing similar structures. Furthermore, it validates our experimental approach to discovering thermodynamic constraints that impose tighter, practically relevant limits, opening a new direction in information thermodynamics research.

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