Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si$_2$Te$_2$

The free-standing monolayer Si $_{2}$ Te $_{2}$ (ML-Si $_{2}$ Te $_{2}$ ) has been theoretically predicted to host a room-temperature quantum spin Hall phase. However, its experimental realization remains challenge due to the absence of a three-dimensional counterpart. Here, we demonstrate that HfTe $_{2}$ serves as an ideal substrate for the epitaxial growth of ML-Si $_{2}$ Te $_{2}$ , preserving its topological phase. Scanning tunneling microscopy and spectroscopy confirm a strain-free $(1 \times 1)$ lattice of ML-Si $_{2}$ Te $_{2}$ , along with a sizable band gap, which is well captured by first-principles calculations. Moreover, distinct edge states, independent of step geometry and exhibiting a broad spatial distribution, are observed at ML-Si $_{2}$ Te $_{2}$ step edges, underscoring its topological nature.

Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si $_{2}$ Te $_{2}$

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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si $_{2}$ Te $_{2}$

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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si22​Te22​

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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si22​Te22​

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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si $_{2}$ Te $_{2}$

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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si $_{2}$ Te $_{2}$

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