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In this paper, we present an on-chip antenna at 290 GHz that achieves a maximum efficiency of 42% on a low-resistivity silicon substrate for sub-terahertz integrated transceivers. The proposed antenna is based on a dual-slot structure to accommodate a limited ground plane and maintain desired radiation and impedance characteristics across the target frequency range. The antenna impedance bandwidth reaches 39% with compact physical dimensions of 0.240.42. Simulation and measurement results confirm its promising antenna performance for potential transceiver and radar applications.

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