The Impact of TaS${}_2$-Augmented Interconnects on Circuit Performance: A Temperature-Dependent Analysis

Monolayer TaS${}_2$ is being explored as a future liner/barrier to circumvent the scalability issues of the state-of-the-art interconnects. However, its large vertical resistivity poses some concerns and mandates a comprehensive circuit analysis to understand the benefits and trade-offs of this technology. In this work, we present a detailed temperature-dependent modeling framework of TaS${}_2$-augmented copper (Cu) interconnects and provide insights into their circuit implications. We build temperature-dependent 3D models for Cu-TaS${}_2$ interconnect resistance capturing surface scattering and grain boundary scattering and integrate them in an RTL-GDSII design flow based on ASAP7 7nm process design kit. Using this framework, we perform synthesis and place-and-route (PnR) for advanced encryption standard (AES) circuit at different process and temperature corners and benchmark the circuit performance of Cu-TaS${}_2$ interconnects against state-of-the-art interconnects. Our results show that Cu-TaS${}_2$ interconnects yield an enhancement in the effective clock frequency of the AES circuit by 1%-10.6%. Considering the worst-case process-temperature corner, we further establish that the vertical resistivity of TaS${}_2$ must be below 22 k$\mathrm{\Omega }$-nm to obtain performance benefits over conventional interconnects.