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We consider a two dimensional semiconductor with a local attraction among the carriers. We study the ground state of this system as a function of the semiconductor gap. We find a direct transition from a superconducting to an insulating phase for no doping at a critical value, the single particle excitations being always gapped. For finite doping we find a smooth crossover. We calculate the critical temperature due to both the particle excitations and the Berezinkii-Kosterlitz-Thouless transition.

生成讲解博客的中文版本

生成AI智能校验的中文版本