Quantum conductivity corrections in two dimensional long-range disordered systems with strong spin-orbit splitting of electron spectrum

We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed the negative correction related to electron-electron interactions. We discuss this result in the context of the problem of the metal-insulator transition in Si-MOSFET structures.