Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times {10}^{5}c{m}^2\mathrm{/}Vs$, with hole density of $4.8\times 10^9 cm^{-2}<p<3.72\times 10^{10}cm^{-2}$inthetemperaturerangeof$50mK<T<1.3K$. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at $r_s=35.1\pm 0.9$, which is in good agreement with the critical $r_s$ for Wigner crystallization ${r_s}^c=37\pm 5$, predicted by Tanatar and Ceperley for an ideally clean 2D system.