Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs\mathrm{/}A{l}_{x}G{a}_{1-x}As$ devices

We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_f$, and the period of the radiation-induced magnetoresistance oscillations appears dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component, $B_{\mathrm{/}\mathrm{/}}$, in the range of $0.6<B_{\mathrm{/}\mathrm{/}}<1.2$ Tesla, at a tilt angle of $\theta ={80}^0$, leaves the oscillatory pattern essentially unchanged.