The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si $_{(1 - x)}$ Ge $_{x}$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).

The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$

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The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$

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The Hall Effect and ionized impurity scattering in Si(1−x)(1−x)​Gexx​

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The Hall Effect and ionized impurity scattering in Si(1−x)(1−x)​Gexx​

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The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$

讲解博客

AI智能校验

The Hall Effect and ionized impurity scattering in Si $_{(1 - x)}$ Ge $_{x}$

讲解博客

AI智能校验