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The position of a field-tuned superconductor-insulator quantum transition occuring in disordered thin films is examined within the mean field approximation. Our calculation shows that the microscopic disorder-induced reduction of the quantum transition point found experimentally cannot be explained if the interplay between the disorder and an electron-electron repulsive interaction is ignored. This work is presented as a microscopic basis of an explanation (cond-mat/0105122) of resistive phenomena near the transition field.

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