加载中…
High-precise calculation of near-infrared absorption and transient spectra in
bulk semiconductors irradiated by an intense terahertz (THz) laser shows that,
the ionization rate of the ground-state exciton, probed through the dynamic
Fano resonance, may decrease with the increase of the THz laser intensity. This
counterintuitive effect indicates the excitons are stabilized against the
field-ionization. The much lower Rydberg energy and atomic unit'' of laser intensity for excitons, and the possibility of creating excitons from the vacuum state’’ allow observing the excitonic stabilization in experiments, in
contrast to the case of atomic stabilization.

生成讲解博客的中文版本

生成AI智能校验的中文版本