Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure

We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.