Imaging of van der Waals Materials via Standing-Wave Photoemission Microscopy: Depth-Resolved Electronic Structure of WS2

Two-dimensional van der Waals materials promise electronic, optoelectronic, and quantum technologies, yet depth-resolved characterization remains challenging. Here, we demonstrate standing-wave photoemission electron microscopy (SW-PEEM) for Angstrom-scale spectromicroscopy of monolayer WS2 on a W/C multilayer substrate. Tuning the X-ray standing wave through the monolayer yields a chemical depth profile and valence-band modulation with enhanced sensitivity to the top and bottom sulfur layers. X-ray optical modeling determines the structure and field distribution. The measurements reveal an ~0.2 eV shift in sulfur-derived valence-band spectral weight between measurements with enhanced sensitivity to the top and bottom sulfur layers. This shift is unlikely to arise from strong direct substrate hybridization and is instead consistent with sulfur-related surface species, as supported by calculations using a representative elemental-sulfur model. These results establish SW-PEEM as a non-destructive depth-resolved probe, highlighting its potential to probe interfacial coupling, chemical reconstruction, and emergent states in van der Waals and moir'e systems.