In-situ tuned photoelectric properties of PtS${}_2$ transistor

Strain engineering is a powerful and widely used strategy for boosting the performance of electronic and optoelectronic devices. Here, we demonstrate an approach to tune the photoelectric properties of Platinum sulfide (PtS${}_2$) by using a ferroelectric substrate PMN-PT as the strain generator. It is found that both the drain current and responsivity of the PtS${}_2$ photodetector is directly coupled to the electrostriction of PMN-PT, showing a high strain-tuned ratio ${10}^3$, high responsivity up to $6.3\times {10}^3$ A/W and detectivity of $9.3\times {10}^{12}$ Jones. Additionally, a high photogain $\approx 5\times 10^{5}$ is obtained at a gate voltage Vg = 15 V. Our results provide an effective method for manipulating electrical properties and optimizing performance of two dimensional layered (2D) materials based optoelectronic devices.