Neutral atom scattering based mapping of atomically thin layers

Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer from the underlying substrate. Using collimated beams of He and Kr atoms as an incident probe on MoS${}_2$ films grown on SiO${}_2$/Si substrate, we observe systematic changes in the scattered atom flux which allows us to map the thin MoS${}_2$ films. Measurements carried out by varying incidence energy using both He and Kr provides insights into the details of atom-surface collision dynamics and its role in contrast generation.