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2020-12-18
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen LiuJeffrey ZhengDixiong WangPariasadat MusavigharaviEric A. StachRoy Olsson IIIDeep Jariwala
文献摘要
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
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