Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic 3 elements into bulk of 3D topological insulators. In Cr(BiSb)Te, the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, , the scanning tunneling microscopy studies have reported a large Dirac gap meV. The discrepancy between the low temperature of quantum anomalous Hall effect ($\ll T_C\gg T_C$) found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of pristine and potassium doped surface of Cr(BiSb)Te. Upon potassium deposition, the -type surface state of pristine sample was turned into an -type, allowing spectroscopic observation of Dirac point. We find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.

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