Hole-Doped Room-Temperature Superconductivity in H$_{3}$S$_{1-x}$Z$_x$ (Z=C, Si)

We examine the effects of the low-level substitution of S atoms by C and Si atoms on the superconductivity of H $_{3}$ S with the $I m \overset{ˉ}{3} m$ structure at megabar pressure. The hole doping can fine-tune the Fermi energy to reach the electronic density-of-states peak maximizing the electron-phonon coupling. This can boost the critical temperature from the original 203 K to 289 K and 283 K, respectively, for H $_{3}$ S $_{0.962}$ C $_{0.038}$ at 260 GPa and H $_{3}$ S $_{0.960}$ Si $_{0.040}$ at 230 GPa. The former may provide an explanation for the recent experimental observation of room-temperature superconductivity in a highly compressed C-S-H system [Nature 586, 373-377 (2020)]. Our work opens a new avenue for substantially raising the critical temperatures of hydrogen-rich materials.

Hole-Doped Room-Temperature Superconductivity in H $_{3}$ S $_{1 - x}$ Z $_{x}$ (Z=C, Si)

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Hole-Doped Room-Temperature Superconductivity in H $_{3}$ S $_{1 - x}$ Z $_{x}$ (Z=C, Si)

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Hole-Doped Room-Temperature Superconductivity in H33​S1−x1−x​Zxx​ (Z=C, Si)

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Hole-Doped Room-Temperature Superconductivity in H33​S1−x1−x​Zxx​ (Z=C, Si)

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Hole-Doped Room-Temperature Superconductivity in H $_{3}$ S $_{1 - x}$ Z $_{x}$ (Z=C, Si)

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Hole-Doped Room-Temperature Superconductivity in H $_{3}$ S $_{1 - x}$ Z $_{x}$ (Z=C, Si)

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