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By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named -SrGeO, which is composed of edge-sharing GeO octahedra interconnected by GeO bipyramids. Single crystals were successfully grown by the high-pressure flux method. -SrGeO has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO octahedra network. Although known compounds with octahedral GeO coordination are commonly unstable at atmospheric pressure and elevated temperatures, -SrGeO exhibits thermal stability up to 700 C.

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