Scanning Tunneling Microscopy (STM) has revolutionized our atomic scale understanding of surfaces and accelerated progress in nanotechnology. This technique, however, is restricted to metal or semiconducting samples, as it requires a tiny current to stabilize the tip-sample distance with atomic scale precision. We developed a new imaging and feedback method that relies on true alternating current (AC) without any direct current (DC) component. This technique does not only enable the imaging on non-conducting surfaces with atomic resolution, like (thin) glass and oxides, it provides also access to high-frequency electronic sample information. We demonstrate that it is possible to measure on 25nm thick silicon oxide with 10 MHz tunneling current.

生成讲解博客的中文版本

生成AI智能校验的中文版本