We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1-HfTe to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe, with dispersion perpendicular to the plane. In contrast, the band structure of heavily K-dosed HfTe is obviously different from that of bulk, and resembles the band structure calculated for monolayer HfTe. It was also observed that lightly K-dosed HfTe is characterized by quantized bands originating from bilayer and trilayer HfTe, indicative of staging. The results suggest that the dimensionality-crossover from 3D (dimensional) to 2D electronic states due to systematic K intercalation takes place via staging in a single sample. The study provides a new strategy for controlling the dimensionality and functionality of novel quantum materials.

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