Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS and its Ruddlesden-Popper phase BaZrS by flux method. X-ray diffraction analyses showed space group of with lattice constants of = 7.056(3) \AA/, = 9.962(4) \AA/, = 6.996(3) \AA/ for BaZrS and with = 7.071(2) \AA/, = 7.071(2) \AA/, = 25.418(5) \AA/ for BaZrS. Rocking curves with full-width-at-half-maximum of 0.011 for BaZrS and 0.027 for BaZrS were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.

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