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The use of spatial quantum superpositions of electron states in a gated vdW heterostructure as a charge qubit is presented. We theoretically demonstrate the concept for the ZrSe/SnSe vdW heterostructure using rigorous ab initio calculations. In the proposed scheme, the quantum state is prepared by applying a vertical electric field, is manipulated by short field pulses, and is measured via electric currents. The qubit is robust, operational at high temperature, and compatible with the current 2D technology. The results open up new avenues for the field of physical implementation of qubits.

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