Interfacial mechanism in the anomalous Hall effect of Co/Bi${}_2$O${}_3$ bilayers

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi${}_2$O${}_3$ interface to the anomalous Hall effect of Co is experimentally studied in Co/Bi${}_2$O${}_3$ bilayers. We evidence a variation of 40% in the AHE of Co when a Bi${}_2$O${}_3$ capping layer is added to the ferromagnet. This strong variation is attributed to an additional source of asymmetric transport in Co/Bi${}_2$O${}_3$ bilayers that originates from the Co/Bi${}_2$O${}_3$ interface and contributes to the skew scattering.