Role of remote interfacial phonons in the resistivity of graphene

The temperature ($T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO${}_2$, SiO${}_2$ and h-BN. The resistivity of graphene shows a linear $T$-dependence at low $T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.