Thermo-remnant magnetization assisted switching response

Here, we describe the prototype for precisely scaled temperature assisted magnetic recording scheme utilizing the characteristics of thermo-remnant magnetization (TRM) in bulk SmCrO${}_3$ as a memory media. The TRM response can be exploited in completely reversible bipolar switching performances either by tuning the temperature only across a sharp thermal window $\mathrm{\Delta }{T}_w$ = 10 K, or annealing isothermally with a single pulse of field $\ge$ 0.1 T by flipping the direction of magnetization from 0${}^o$ to 180${}^o$. The microscopic mechanism of TRM in SmCrO${}_3$ is explored by means of diffuse scattering using high energy $\lambda =0.4997\mathring{A}$ neutrons and thermal variation of coercivity in $T_N\pm \mathrm{\Delta }T$ range. It is noticed that the huge heterogeneity reflected by the estimated average spin-spin correlation length of the fluctuations in microscopic spin configuration being $\le$ 90 $\mathring{A}$ and efficient domain wall pinning effect as the defect dimensions are approximately twice to the domain wall width, governs the peculiar characteristic of TRM in SmCrO${}_3$.